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Field domains in semiconductor superlattices
Author(s) -
Schwarz G.,
Schöll E.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940130
Subject(s) - condensed matter physics , superlattice , semiconductor , domain (mathematical analysis) , doping , physics , field (mathematics) , statistical physics , materials science , quantum mechanics , mathematics , mathematical analysis , pure mathematics
Field domain formation in the regime of vertical high‐field transport in semiconductor superlattices is studied theoretically. Depending upon the mean doping density N D , either stable stationary domains (for high N D ), or self‐sustained oscillations of the domains (for intermediate N D ) are found. Our simulations show that this behaviour is strongly affected by growth‐related imperfections like small fluctuations of the doping density, and that weak disorder on microscopic scales can be quantitatively detected by the global macroscopic current‐voltage characteristics. The role of the different realizations of the microscopic disorder and different boundary conditions are discussed. Equal areas rules for domain formation are derived under simplifying approximations.