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Optical interband properties of some semiconducting silicides
Author(s) -
Lange H.,
Henrion W.,
Fenske F.,
Zettler Th.,
Schumann J.,
Teichert S.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940122
Subject(s) - semiconductor , reflection (computer programming) , condensed matter physics , materials science , electronic band structure , transmission (telecommunications) , optoelectronics , physics , telecommunications , computer science , programming language
Optical transmission and reflection as well as ellipsometric studies are performed for the semiconducting phases CrSi 2 , MnSi x , and Ir 3 Si 5 in the energy region from 0.2 to 5.0 eV. Onsets of strong interband transitions are found around 0.5 eV for the former two compounds and 1.2 eV for the latter one. Optical data analysis for the former two compounds suggests them to be indirect semiconductors whereas for the latter to be a direct one. Main interband features for CrSi 2 and MnSi 1.73 appear between 1 and 2 eV and for Ir 3 Si 5 at 3 eV. An explanation of these findings is given in terms of existing band structure and density of states considerations.