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On the temperature dependence of InGaAsP semiconductor lasers
Author(s) -
Haug A.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940119
Subject(s) - quantum well , optoelectronics , laser , materials science , semiconductor laser theory , semiconductor , condensed matter physics , optics , physics
The temperature dependence of the threshold current of InGaAsP lasers can be improved by using quantum well structures and, in particular, strained quantum wells instead of the bulk material.