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Deep‐level planar doping of titanium in GaAs
Author(s) -
Krispin P.,
Kostial H.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940115
Subject(s) - doping , materials science , planar , molecular beam epitaxy , heterojunction , titanium , acceptor , crystallographic defect , capacitance , optoelectronics , epitaxy , admittance , deep level transient spectroscopy , conductance , condensed matter physics , chemistry , nanotechnology , silicon , electrode , metallurgy , electrical engineering , electrical impedance , physics , computer graphics (images) , layer (electronics) , engineering , computer science
Titanium is incorporated in GaAs by planar doping during growth interruption of molecular beam epitaxy. Deep‐level defects are studied by measuring the capacitance and ac conductance in dependence on bias, frequency, and temperature. We report on the first investigation of the dynamic behavior of deep electronic states at interfaces intentionally doped with electrically active defects. Admittance versus bias spectroscopy at sufficiently low frequencies is proposed as a new method to detect deep levels exclusively at interfaces in homo‐ or heterojunctions. For the planar‐doped titanium sheet, an intrinsic point defect level at 0.35 eV is identified in addition to the Ti 2+ /Ti 3+ acceptor level at 0.24 eV. The incorporation of Ti is accompanied by the formation of native defects. The majority of Ti atoms is found to be electrically inactive.