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Growth of bulk ZnSe crystals — recent developments
Author(s) -
Siche D.,
Hartmann H.,
Böttcher K.,
Krause E.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940111
Subject(s) - luminescence , substrate (aquarium) , materials science , dislocation , exciton , crystal growth , chemical vapor deposition , chemical physics , seeding , photoluminescence , crystallography , optoelectronics , condensed matter physics , chemistry , composite material , thermodynamics , geology , physics , oceanography
Starting with a historical review and a general comparison of growth methods, the paper deals with the seeded vapour growth of substrate‐quality ZnSe crystals. Under optimized growth conditions, in contrast to the growth from the melt, in SPVT and SCVT (seeded physical and chemical vapour transport) twin‐free single crystals are prepared. The dislocation density decreases down to ≈10 4 cm −2 in growth direction away from the seed transition region. SPVT‐grown crystals are the better ones with respect to optical properties showing exciton luminescence and decreasing deep level emission. For the application in homoepitaxy, the SCVT‐grown crystals with lowest defect densities seem to be superior.