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Loss minimization through recombination center identification in solar cells
Author(s) -
Lu FuHsing
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940110
Subject(s) - recombination , open circuit voltage , center (category theory) , carrier lifetime , voltage , solar cell , charge carrier , optoelectronics , constant (computer programming) , materials science , atomic physics , physics , chemistry , silicon , computer science , crystallography , quantum mechanics , biochemistry , gene , programming language
Carrier recombination, one of the major loss mechanisms in solar cells, has been found to be quite sensitive to the charge character of the Shockley‐Read‐Hall recombination center. Varying either the capture cross sections of the carriers or the density of the recombination centers results in a substantial change of the open‐circuit voltage as well as the fill factor in a solar cell. Compared to a neutral center, the center which remains repulsive to the opposite carrier after capturing a first carrier is beneficial to the open‐circuit voltage, when maintaining a constant density of recombination centers, whereas the center which becomes attractive to the minority carrier is detrimental to the open‐circuit voltage.