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Heterojunctions in photovoltaic applications
Author(s) -
Elstner L.,
Conrad E.,
Eschrich H.,
Füssel W.,
Flietner H.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940109
Subject(s) - photocurrent , heterojunction , silicon , semiconductor , optoelectronics , materials science , photovoltaic system , theory of solar cells , solar cell , band gap , polymer solar cell , engineering physics , physics , electrical engineering , engineering
Numerical simulations on silicon solar cells with heteroemitter layers made from various wide‐gap semiconductors are described and the dependence of the I–V curves on the band offsets is explained. The main advantage utilizing heteroemitters on silicon is the chance for an improved response in the blue region of the solar spectrum which may achieve an increase of the total photocurrent up to 10%. Experimental results on test solar cells with μc‐Si, ZnO, and SIPOS heteroemitters are presented and compared with these predictions.