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Refined RBS and AES techniques for the analysis of thin films used in photovoltaic devices
Author(s) -
Bohne W.,
Fenske F.,
Kelling S.,
Schöpke A.,
Selle B.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221940108
Subject(s) - auger , projectile , normalization (sociology) , auger electron spectroscopy , materials science , formalism (music) , photovoltaic system , ion , analytical chemistry (journal) , spectral line , thin film , principal component analysis , atomic physics , chemistry , computer science , physics , nanotechnology , electrical engineering , nuclear physics , metallurgy , engineering , art , artificial intelligence , anthropology , sociology , visual arts , musical , chromatography , organic chemistry , astronomy
The analytical potential of refined RBS and AES techniques is demonstrated by two examples: (i) thin FeSi 2 absorber layers on Si and (ii) TiNiAg multilayer contact structures. Both systems have prospects as components in photovoltaic cell devices. In the case of RBS, the refinement concerns an improved mass resolution achieved by applying projectile ions of higher masses ( 15 N, 22 Ne) at higher energies (up to 25 MeV). For AES the principal component analysis (PCA) formalism is adopted starting with a peak‐to‐peak height normalization of the relevant Auger peaks in the measured spectra. This evaluation procedure, which takes advantage of the chemical information inherent in the Auger line shape, gives depth profiles of the elements with respect to their chemical bonding state.