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Photon avalanche in Tm doped CdF 2
Author(s) -
Bouffard M.,
Jouart J. P.,
Mary G.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221930125
Subject(s) - photon upconversion , excited state , doping , excitation , photon , atomic physics , laser , materials science , two photon excitation microscopy , optoelectronics , physics , optics , quantum mechanics
The spectroscopic and dynamic studies of the Tm 3+ doped cadmium fluoride show the existence of a 450 nm emission ( 1 D 2 → 3 F 4 transition), excited around 650 nm ( 3 H 4 → 1 D 2 transition) by a tunable laser. The presence of a power threshold for the density of excitation allows to establish that the upconversion mechanism is the photon‐avalanche process.