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Temperature dependence of the electrical resistivity of Y 3 Co 11 B 4 and Gd 3 Co 11 B 4 compounds
Author(s) -
Kowalczyk A.,
Ivanov V.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221930117
Subject(s) - electrical resistivity and conductivity , boron , scattering , atmospheric temperature range , rare earth , crystallography , materials science , metal , chemistry , condensed matter physics , atomic physics , mineralogy , physics , meteorology , organic chemistry , quantum mechanics , optics , metallurgy
The temperature dependence of the electrical resistivity Q of R 3 Co 11 B 4 (R = Y and Gd) in the temperature range from 4.2 to 370 K is presented. These compounds crystallize in the Ce 3 Co 11 B 4 ‐type structure. The unit cell of the structure contains 18 atoms. The rare earth atoms are distributed in two different crystallographic sites, the Co atoms in three different positions, and boron is located in one type of site. In the low‐temperature region Q is proportional to T 2 . This quadratic dependence is caused by electron‐spin wave scattering. The experimental results are compared with transport properties of other rare earth‐transition metal compounds.