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Inter‐Landau level tunneling in an InGaAs/AlAs/GaAs structure under tilted magnetic field
Author(s) -
Gobato Y. Galvão,
Berroir J. M.,
Guldner Y.,
Vinter B.,
Nagle J.,
Rivera P. H.
Publication year - 1996
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221930112
Subject(s) - condensed matter physics , landau quantization , quantum tunnelling , magnetic field , scanning tunneling spectroscopy , physics , quantum well , quantum mechanics , laser
Magneto‐tunneling studies in a high‐quality InGaAs/AlAs/GaAs triple well structure in a tilted magnetic field are reported. Well‐defined structures in the 1(V) characteristic in the resonance regime are observed which correspond to tunneling from Landau levels in the prewell into the midwell with non‐conservation of the Landau‐level index tunneling transitions. These tunneling transitions with Δn both positive and negative are observed for the first time in the resonant regime under tilted magnetic field. Finally, the results are shown to be in fair agreement with a coherent magneto‐tunneling model where the effect of the transverse component of the magnetic field is treated as a perturbation.