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Study of RF Sputtered aSi: H and aGe: H by Photothermal Deflection Spectroscopy
Author(s) -
Rovira P. I.,
Alvarez F.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221920222
Subject(s) - photothermal therapy , photothermal spectroscopy , materials science , hydrogen , radio frequency , deflection (physics) , spectroscopy , analytical chemistry (journal) , germanium , partial pressure , optoelectronics , silicon , optics , chemistry , nanotechnology , oxygen , telecommunications , physics , organic chemistry , chromatography , quantum mechanics , computer science
The effect of hydrogenation in radio‐frequency (rf) sputtered aSi: H and aGe: H films is studied. Photothermal deflection spectroscopy is used to study the evolution of the sample quality on hydrogen incorporation. The influence of the substrate temperature, target bias, and hydrogen partial pressure on the sub‐gap absorption coefficient and on the hydrogen incorporated in the films is reported.