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The Perspectives of Hydrogenated Amorphous Germanium as an Electronic Material
Author(s) -
Chambouleyron I.,
Graeff C. F.,
Zanatta A. R.,
Fajardo F.,
Mulato M.,
Campomanes R.,
Comedi D.,
Marques F. C.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221920203
Subject(s) - germanium , materials science , amorphous solid , sputtering , doping , deposition (geology) , engineering physics , germanium compounds , optoelectronics , nanotechnology , thin film , crystallography , silicon , chemistry , engineering , biology , paleontology , sediment
This paper refers to the perspectives of the use of hydrogenated amorphous germanium and its alloys (deposited by the rf sputtering method). It is shown that considerable progress has been made in the optimization of aGe: H films. The deposition conditions leading to a good quality material and the corresponding properties are discussed. The problem of material stability, as well as recent progress in the understanding of the n‐ and p‐type doping mechanisms in the aGe: H network are presented. The main issues and perspectives of hydrogenated GeSi, GeN, and GeSn alloys are analyzed. Finally, results in the aGe: H device area are presented.