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Optical Properties of Interband Transitions in the Oxygen‐Plasma‐Anodised Film on Gallium Arsenide 〈100〉
Author(s) -
Xu XiaoLiang,
Zhu LiXin,
Chen T. P.,
Fung S.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221920124
Subject(s) - cathodoluminescence , photoluminescence , materials science , gallium arsenide , excitation , gallium , anodizing , absorption (acoustics) , optoelectronics , oxygen , plasma , photoluminescence excitation , luminescence , chemistry , aluminium , physics , metallurgy , organic chemistry , quantum mechanics , composite material
A first study of optical emission and excitation properties from interband transitions in an oxygen‐plasma‐anodised (OPA) film on GaAs 〈100〉 is reported. Six optical emission (EM) structures ranging from 2.83 to 4.60 eV are observed using cathodoluminescence (CL) and photoluminescence (PL) methods. The PL excitation spectra (EX) obtained have also demonstrated that the nine absorption transitions are related to the EM bands.