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Hot‐Electron Magneto‐Transport in Narrow‐Gap Semiconductors in Quantum Magnetic Field
Author(s) -
Weng X. M.,
Lei X. L.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221910119
Subject(s) - drift velocity , condensed matter physics , magnetic field , electron , physics , quantum limit , semiconductor , landau quantization , quantum , quantum mechanics
The longitudinal magneto‐transport in narrow‐gap semiconductor InSb under a quantum magnetic field at 42 K is investigated using the balance equation theory. The nonparabolicity of the energy band and scatterings due to ionized impurities, acoustic and polar optical phonons are taken into account. All the subbands occupied by electrons are included in the calculation. The longitudinal magnetic field reduces the drift velocity and leads to a decrease of the electron temperature. The drift mobility decreases with increasing magnetic field. The drift velocity under the extreme‐quantum‐limit assumption is completely different from that taking into account all possible subbands occupied by electrons.