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About a Conjunction between Electrical and Optical Phenomena in p‐Type Heavily Doped Silicon at Room Temperature
Author(s) -
Van Cong H.,
Debiais G.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221910117
Subject(s) - quasi fermi level , band gap , condensed matter physics , silicon , doping , fermi level , effective mass (spring–mass system) , semimetal , valence band , fermi energy , materials science , electronic band structure , physics , optoelectronics , electron , quantum mechanics
Abstract The conjunction between electrical and optical phenomena in p‐type heavily doped silicon at room temperature is investigated, based on our accurate empirical models for the band‐gap narrowing, apparent band‐gap narrowing, and unperturbed Fermi energy shift. The numerical results of optical band gap, reduced interacting Fermi energy, and reduced interacting density‐of‐valence band states effective mass are presented and compared with other theoretical results and experiments. It is concluded that, taking into account the unperturbed Fermi energy shift effect, the values of band‐gap narrowing, obtained from electrical and optical phenomena, are found to be the same, removing the disagreements or discrepancies in theoretical and experimental values of band‐gap narrowing existing so far in the literature.