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Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields
Author(s) -
Kavaliauskas J.,
Krivaite G.,
Galickas A.,
Šimkiene I.,
Olin U.,
Ottosson M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221910116
Subject(s) - electric field , quantum tunnelling , quantum confined stark effect , quantum well , stark effect , exciton , condensed matter physics , photocurrent , physics , chemistry , materials science , optoelectronics , quantum mechanics , laser
Photocurrent and electroreflectance spectroscopies are combined to study the transformation of the quantum confined Stark effect under high electric fields in shallow InGaAs/GaAs quantum wells. Experimental evidences of exciton quenching and carrier tunneling out of the well are obtained. The coupling between quasibound and continuum states in the strong electric field region results in the increase of absorption below the band gap of the barrier.