Premium
Relativistic Positronium Planar Channeling. Ground State Properties
Author(s) -
Boev O. V.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221910108
Subject(s) - positronium , planar , ground state , atom (system on chip) , atomic physics , crystal (programming language) , physics , symmetry (geometry) , molecular physics , quantum mechanics , geometry , computer graphics (images) , mathematics , positron , computer science , programming language , embedded system , electron
Abstract The ground state of a relativistic positronium (Ps) atom moving in the planar channeling regime in a Si crystal is investigated within the continuum potential approximation. The strong dependence of the internal structure of the Ps atom and its spatial distribution inside the crystal is found to be a function of the total energy of Ps. The squeezing of the atom and destroying of the spherical symmetry of the Ps ground state in a crystal with increasing Ps total energy is demonstrated. A brief discussion of applications and extensions is given.