Premium
Random Impurity Potential and Hopping Conduction in ZnSe
Author(s) -
Kasiyan V. A.,
Nedeoglo D. D.,
Timchenko I. N.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900220
Subject(s) - impurity , condensed matter physics , magnetoresistance , thermal conduction , doping , conductivity , conduction band , variable range hopping , materials science , electrical resistivity and conductivity , hall effect , atmospheric temperature range , electron , electron mobility , chemistry , magnetic field , physics , organic chemistry , quantum mechanics , composite material , meteorology
Hall effect, electrical conductivity, carrier mobility, and magnetoresistance of Cu‐doped n‐ZnSe bulk crystals are studied in the temperature range 2 to 300 K. Compensating Cu impurity amplifies the random impurity potential, modulates the band edges, and leads to electron localization in the potential wells of the conduction band bottom in slightly doped, highly compensated crystals ( K = 0.82 to 0.97). High‐temperature hopping conductivity through the localized states of such type observed in the range 100 to 200 K and accompanied by negative magnetoresistance is first investigated in n‐ZnSe.