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Conduction Band Edge Charge Densities in In x Ga 1− x Sb
Author(s) -
Bouarissa N.,
Aourag H.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900131
Subject(s) - pseudopotential , ternary operation , condensed matter physics , conduction band , impurity , semiconductor , materials science , crystal (programming language) , charge (physics) , enhanced data rates for gsm evolution , electron , physics , quantum mechanics , optoelectronics , telecommunications , computer science , programming language
The empirical pseudopotential method coupled with the virtual crystal approximation which incorporates compositional disorder as an effective potential is used to compute the electronic conduction band edge charge densities at the Γ and X points for the ternary alloy In x Ga 1–x Sb. It is found that these charge densities are strongly dependent upon the stochiometric coeficient x . Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.