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X‐Ray Diffraction Study of Thin Porous Silicon Layers
Author(s) -
Lomov A. A.,
Bellet D.,
Dolino G.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900130
Subject(s) - porous silicon , materials science , diffraction , porosity , silicon , x ray crystallography , optics , crystallography , composite material , optoelectronics , physics , chemistry
High resolution X‐ray diffraction measurements are performed on porous silicon samples (p + type, 40% porosity) of various thicknesses (from 0.03 to 20 μm). In the thicker samples narrow Bragg peaks are observed for as‐formed samples, with profiles close to those of dynamical diffraction theory. For thin samples (in the 0.1 μm range) the Bragg peak of the porous layer is not resolved, but appears as a shoulder on the substrate peak. Thickness fringes are observed, from which simulations give information on these thin PS layers, showing that the porous layer surfaces are well defined.