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Si/CaF 2 Superlattices. A Direct Gap Structure Due to Interface State Coupling
Author(s) -
Ossicini Stefano,
Fasolino A.,
Bernardini F.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900118
Subject(s) - superlattice , materials science , silicon , interface (matter) , optoelectronics , epitaxy , coupling (piping) , lattice (music) , context (archaeology) , band gap , condensed matter physics , nanotechnology , physics , layer (electronics) , metallurgy , paleontology , capillary number , capillary action , acoustics , composite material , biology
One promising approach for the development of silicon‐based light‐emitting devices is the epitaxial growth of Si nanostructures. In this context, the lattice matched system CaF 2 /Si/CaF 2 as prototype of a well controlled and ordered Si‐based system with known microscopic structure is proposed. For this system, a new mechanism is found leading to a direct band gap based on the coupling of interface states in very thin Si layers.