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Anodized Amorphous Silicon: Present Status
Author(s) -
Bustarret E.,
Ligeon M.,
Rosenbauer M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900117
Subject(s) - amorphous solid , anodizing , materials science , amorphous silicon , silicon , boron , photoluminescence , porous silicon , chemical engineering , nanocrystalline silicon , nanotechnology , optoelectronics , composite material , crystalline silicon , chemistry , crystallography , organic chemistry , aluminium , engineering
Abstract The results of the few groups which have attempted to etch chemically or electrochemically amorphous silicon films prepared in various ways are reviewed briefly with a focus on the photoluminescence of such layers. The particular case of plasma‐deposited boron‐doped hydrogenated amorphous silicon subjected to an anodization in HF solutions followed by an electro‐oxidation in water is elucidated. Many similaritics between the properties of these materials and those of their crystalline counterparts are emphasized, but one significant difference between the resonantly excited PL spectra of the two porous materials is pointed out.