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Radiative and Nonradiative Recombination in Porous Silicon. What Can We Learn from Spin Resonance?
Author(s) -
Stutzmann M.,
Brandt M. S.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900115
Subject(s) - recombination , photoconductivity , photoluminescence , porous silicon , exciton , spin (aerodynamics) , non radiative recombination , spontaneous emission , radiative transfer , silicon , luminescence , materials science , resonance (particle physics) , electron paramagnetic resonance , optoelectronics , condensed matter physics , atomic physics , molecular physics , physics , chemistry , nuclear magnetic resonance , semiconductor materials , optics , semiconductor , laser , biochemistry , gene , thermodynamics
Recent results of spin‐resonance investigations of porous silicon are presented. Special attention is given to nonradiative and radiative recombination processes as detected by spin‐dependent recombination (spin‐dependent photoconductivity, SDPC, and optically detected magnetic resonance, ODMR). P b ‐like defects are identified as the main recombination centers which quench both photoconductivity and visible photoluminescence in porous Si. Strongly localized triplet excitons are found as the initial states of visible luminescence.