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Core Shell Spectroscopy of Rapidly Oxidised Porous Silicon. Linking the Chemical and Electronic Structure
Author(s) -
Bancert U.,
Gardelis S.,
Hamilton B.,
Pettifer R.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900111
Subject(s) - porous silicon , luminescence , materials science , silicon , porosity , scanning transmission electron microscopy , transmission electron microscopy , spectroscopy , porous medium , scanning electron microscope , synchrotron , chemical engineering , electron spectroscopy , nanotechnology , x ray photoelectron spectroscopy , optoelectronics , composite material , optics , physics , engineering , quantum mechanics
High resolution scanning transmission electron microscopy (STEM) and synchrotron X‐ray excitation of luminescence (XEOL) is used to probe the chemical nature of the luminescence mechanisms of porous and rapidly oxidised porous silicon. It is concluded that for fresh porous silicon, Si‐Si bonded material is involved in the luminescence. For oxidised material this is probably not the case, the chemical environment being SiO 2 .