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Ultrafast Carrier Dynamics in Porous Silicon
Author(s) -
Fauchet P. M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900109
Subject(s) - porous silicon , materials science , luminescence , photoluminescence , silicon , optoelectronics , auger effect , femtosecond , semiconductor , excitation , trapping , carrier lifetime , auger , optics , atomic physics , laser , physics , ecology , quantum mechanics , biology
The carrier dynamics in porous silicon is investigated by two time‐resolved techniques. The blue photoluminescence of oxidized porous silicon is measured with 100 ps time resolution as a function of the oxidation method, emission wavelength, excitation intensity, and measurement temperature. The blue luminescence has a distinct origin from the well‐studied rcd luminescence and is attributed to defects in the oxide. Femtosecond photoinduced absorption measurements are performed on thin red‐emitting porous silicon films. The wavelength and intensity dependence of the recovery are interpreted in terms of trapping and of Auger recombination at high excitation intensity. It is shown that red‐emitting porous silicon is not a direct‐gap semiconductor.