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Temperature Dependent Photoluminescence and Optical Absorption of Wide‐Gap Amorphous Silicon Carbon Alloys
Author(s) -
Rüter D.,
Rolf S.,
Bauhofer W.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900107
Subject(s) - materials science , photoluminescence , silicon , amorphous silicon , nanocrystalline silicon , amorphous carbon , substrate (aquarium) , amorphous solid , carbon fibers , absorption (acoustics) , porous silicon , optoelectronics , crystalline silicon , analytical chemistry (journal) , composite material , chemistry , crystallography , organic chemistry , composite number , oceanography , geology
Abstract The photoluminescence (PL) properties of “porous silicon” prepared by spark erosion and of amorphous silicon carbon alloys. amorphous silicon carbon oxygen alloys and hydrogenated amorphous carbon prepared by CVD methods from liquid precursors are measured. Ellicient blue‐green PL is measured as a function of temperature up to 800 K. Optical absorption data in the high energy range (UV) are obtained from transmission measurements. Very low absorption coellicients in the visible spectral range are determined in light‐guiding thin film structures which are grown as a three‐layer sandwich on a silicon substrate.