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Electric and Photoelectric Properties of High Porosity Silicon
Author(s) -
Kǔoka J.,
Fejfar A.,
Pelant I.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221900105
Subject(s) - photoelectric effect , porous silicon , materials science , electric field , porosity , isotropy , photoconductivity , trapping , silicon , photoluminescence , microstructure , homogeneity (statistics) , redistribution (election) , porous medium , time constant , optoelectronics , condensed matter physics , composite material , optics , physics , electrical engineering , computer science , ecology , quantum mechanics , machine learning , politics , law , political science , biology , engineering
The basic problems of porous silicon (PS) transport, like long time constants, ageing, and the influence of contacts are discussed. The results of the steady‐state and transient photoconductivity on the self‐supporting p‐ and n‐type PS are presented and the resulting conclusions, related to the microstructure isotropy, trapping, and time‐dependent electric field redistribution are summarized. On the basis of the dark I–U characteristics and their temperature dependencies the different volume and surface transport mechanisms are discussed. The compatibility of the models of explanation of the strong PS photoluminescence with our transport results is discussed.