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Pressure Dependence of Electron and Positron Band Structures in Elemental Semiconductors
Author(s) -
Alkhafaji S. T.,
Amrane N.,
Bouarissa N.,
Badi N.,
Soudini B.,
Sehil M.,
Aourag H.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221890116
Subject(s) - pseudopotential , positron , semiconductor , electronic band structure , band gap , condensed matter physics , lattice (music) , electron , materials science , homopolar motor , atomic physics , physics , nuclear physics , quantum mechanics , optoelectronics , acoustics , magnet
On the basis of the local pseudopotential method and the independent particle approximation, the electron and positron band structures of Si, Ge, C, and α‐Sn with respect to the variation of pressure are discussed. The positron band structure in a periodic lattice is similar to its electron counterpart. Some physical properties of these semiconductors such as the homopolar gap and the bulk modulus are calculated from the positron band structure.