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Ultrasonic Attenuation in Semiconductor Quantum Heterostructures under a High Magnetic Field
Author(s) -
Rodrigues C.,
Fonseca A. L. A.,
Nunes O. A. C.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221890114
Subject(s) - heterojunction , attenuation , condensed matter physics , magnetic field , quantum limit , landau quantization , ultrasonic attenuation , electron , semiconductor , fermi gas , physics , quantum , quantum well , ultrasonic sensor , materials science , quantum mechanics , acoustics , laser
A theory of ultrasonic attenuation in a quasi‐two‐dimensional electron gas in a quantum well semiconductor heterostructure in the presence of a quantizing magnetic field is presented. The effect of the high magnetic field on the ultrasonic attenuation coefficient is studied in the extreme quantum limit, when all the electrons are accomodated in the lowest Landau level and electro‐subband. Numerical examples are shown and discussed.