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Bound hole states in direct‐gap semiconductors with screw dislocations
Author(s) -
Razumova M. A.,
Khotyaintsev V. N.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880218
Subject(s) - condensed matter physics , burgers vector , anisotropy , semiconductor , bound state , effective mass (spring–mass system) , dislocation , physics , materials science , optics , quantum mechanics
The dispersion law of holes bound at a screw dislocation in cubic semiconductors is calculated on the basis of deformation potential theory taking into account the threefold degeneracy of the valence band maximum in a perfect crystal. The lowest dislocation band (the corresponding azimuthal quantum number is m = 0) is slightly affected by the anisotropy of the effective mass. Only the change of the effective mass is observed. The states with azimuthal number m ≠ 0 are considerably more affected by the anisotropy of the effective mass. A mixing of longitudinal and transverse motions (with respect to the dislocation line direction) takes place and terms linear in k ‖ appear in the dispersion law. The optical transitions associated with these states are intense for a polarization of light transverse with respect to the dislocation line and may cause circular dichroism in the absorption. The long‐wave edge of the dislocation absorption on the whole is formed by transitions from the deepest band m = 0 and is polarized along the Burgers vector b .