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Semiconductor heterointerface characterisation via effective harmonic oscillator simulation
Author(s) -
Anagnostakis E. A.,
Theodorou D. E.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880212
Subject(s) - heterojunction , quantum well , semiconductor , optoelectronics , fermi gas , yield (engineering) , harmonic oscillator , electron , harmonic , photoconductivity , condensed matter physics , physics , materials science , optics , quantum mechanics , laser , thermodynamics
The persistent photoconductivity (PP) measurements concerning the two‐dimensional electron gas (2DEG) hosted by the quantum well (QW) of an illuminated typical semiconductor heterojunction (HJ) are processed to yield the respective heterointerface (HI) characterisation in terms of fundamental parameters identifying the HJ QW. The procedure involves the employment of an effective harmonic oscillator as simulating the QW electron‐confining potential, as well as the introduction of a HI descriptor incorporating the QW spatial width along with the generic oscillator eigenfrequency.