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Vibrational properties of thin films of ultraheavily doped semiconductors
Author(s) -
Alvarado F. L. Castillo,
UrbaniakKucharczyk A.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880209
Subject(s) - doping , thin film , materials science , semiconductor , optoelectronics , engineering physics , nanotechnology , physics
The pseudospin model for the G 1−x P x semiconductor alloy is considered in the coherent potential approximation. The phonon density of states in ultraheavily doped semiconductor thin films is investigated as a function of impurity concentration and the position of a monatomic layer inside the film. The obtained results show the dependence of the local density of states on the surface conditions.

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