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A Green's function approach to the description of optical properties of disordered semiconductors
Author(s) -
Stroucken T.,
Anthony C.,
Knorr A.,
Thomas P.,
Koch S. W.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880151
Subject(s) - semiconductor , coulomb , condensed matter physics , function (biology) , surface finish , physics , green's function , interface (matter) , materials science , statistical physics , quantum mechanics , gibbs isotherm , surface tension , composite material , biology , electron , evolutionary biology
A Green's function approach to the optical response of disordered semiconductors is presented. The theory is illustrated studying light propagation in semiconductor multiple quantum wells with well‐width fluctuations and interface roughness. The combined influence of disorder, Coulomb, and propagation effects leads to characteristic features of the transmitted pulse.