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Influence of inhomogeneous broadening on spectrally resolved four‐wave mixing in semiconductors
Author(s) -
Pantke K.H.,
Erland J.,
Hvam J. M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880144
Subject(s) - exciton , homogeneous broadening , mixing (physics) , excited state , homogeneous , semiconductor , four wave mixing , quantum beats , physics , transient (computer programming) , atomic physics , quantum well , condensed matter physics , quantum , molecular physics , optics , doppler broadening , optoelectronics , spectral line , quantum mechanics , nonlinear optics , laser , statistical physics , operating system , computer science
The influence of inhomogeneous broadening on results obtained from spectrally resolved transient four‐wave mixing in semiconductors is studied and the homogeneous and inhomogeneous linewidths are simultaneously deduced. Experimental results obtained from the impuritybound exciton I 1 in CdSe and the heavy‐hole and light‐hole excitons in GaAs multiple quantum well structures are presented. Furthermore, the case is investigated when more resonances are coherently excited leading to quantum beats.