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The role of coherence for carrier relaxation in photo‐excited semiconductors
Author(s) -
Kuhn T.,
Haas S.,
Rossi F.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880134
Subject(s) - dephasing , polarization (electrochemistry) , physics , coherence (philosophical gambling strategy) , semiconductor , scattering , monte carlo method , statistical physics , laser , computational physics , excited state , condensed matter physics , quantum mechanics , chemistry , mathematics , statistics
The role played by the dynamics of the interband polarization for the correct description of the generation of carriers by a short laser pulse is investigated. The calculations are based on the semiconductor Bloch equations which are solved by means of a generalized Monte Carlo simulation. It turns out that some of the approaches commonly used for a microscopic modelling of the dephasing process fail in describing correctly the effect of carrier‐carrier interaction in the low‐density limit. By including terms which have the structure of “in‐scattering” terms (vertex corrections) for the interband polarization, the experimentally observed features in the carrier dynamics are well reproduced in the whole density range.