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Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires
Author(s) -
Gippius N. A.,
Tikhodeev S. G.,
Rubio J.,
Calleja J. M.,
Ils P.,
Forchel A.,
Kulakovskii V. D.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880124
Subject(s) - raman scattering , photoluminescence , materials science , polarization (electrochemistry) , raman spectroscopy , scattering , optoelectronics , optics , chemistry , physics
The photoluminescence and Raman scattering intensities of InGaAs/InP quantum well wires with wire widths L x between 10 nm and 1 pm are strongly polarized parallel to the wire axis. This effect is mainly due to the spatial redistribution of the electric component of the electromagnetic field in the vicinity of the quantum wire.