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Carrier cooling in intermixed GaAs/ AlGaAs quantum dots and wires using high excitation and transient spectroscopy
Author(s) -
Adler F.,
Burkard M.,
Schweizer H.,
Benner S.,
Haug H.,
Klein W.,
Tränkle G.,
Weimann G.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880121
Subject(s) - excitation , materials science , transient (computer programming) , relaxation (psychology) , quantum dot , excitation wavelength , optoelectronics , spectroscopy , carrier lifetime , deep level transient spectroscopy , wavelength , molecular physics , chemistry , silicon , physics , quantum mechanics , computer science , operating system , psychology , social psychology
Buried low‐dimensional integrated dot and wire structures fabricated by masked implantation enhanced intermixing are compared directly. Using high excitation and transient spectroscopy hot carrier effects as well as phase‐space filling in the low‐dimensional structures are observed. The carrier cooling curves of the wires and dots show a bend at about 350 ps which may be an indication of two dominant relaxation mechanisms. The influences of the carrier capture in low‐dimensional systems and the relaxation on the carrier temperature are separated by measurements with different excitation wavelengths.