Premium
Lateral quantization effects in the Luminescence of InGaAs/InP quantum wires
Author(s) -
Forchel A.,
Kieseling F.,
Braun W.,
Ils P.,
Wang K. H.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880120
Subject(s) - luminescence , excited state , materials science , quantization (signal processing) , perpendicular , quantum wire , relaxation (psychology) , optoelectronics , quantum , condensed matter physics , atomic physics , physics , psychology , social psychology , geometry , mathematics , quantum mechanics , computer science , computer vision
Cw and time‐resolved luminescence spectra of InGaAs/InP quantum wires with lateral extensions down to 10 nm are investigated. The luminescence of the wires shows shift to higher energy as well as features due to transitions of up to four lateral subbands when the wire widht is reduced to less than 50nm. Time‐resolved studies with subpicosecond time resolution indicate that the typical relaxation times for resonantly excited carriers in the wires are below 10 ps. If the laser is polarized perpendicular to the wires the direct absorption in the wires is suppressed. This is used to study the population of the wires by carrier capture from the unpatterned InP sections of the wires due to lateral quantization.