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Persistent spectral hole‐burning phenomenon of semiconductor quantum dots
Author(s) -
Masumoto Y.,
Okamoto S.,
Yamamoto T.,
Kawazoe T.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880118
Subject(s) - spectral hole burning , quantum dot , quantum tunnelling , exciton , materials science , semiconductor , nanocrystalline material , condensed matter physics , fluence , physics , optoelectronics , nanotechnology , optics , laser
The persistent spectral hole‐burning (PSHB) phenomenon is observed generally in nanocrystalline semiconductors, CdSe, CuBI, and CuBr, embedded in glass and crystal. In the inhomogeneously broadened exciton absorption spectra of these quantum dots, the spectral hole and its associated structure are produced by the narrow‐band laser excitation and are conserved for more than several hours at 2K. The hole depth grows in proportion to the logarithm of the burning fluence. Thermal‐annealing and light‐induced hole‐filling phenomena are observed. The hole burning takes place by tunneling through potential barriers with broadly distributed barrier heights and thicknesses. Photoionization of dots and carrier tunneling into traps in the host are the most probable origins of the PSHB phenomenon. A possible application of the PSHB phenomenon is discussed.