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Carrier dynamics and lasing in epitaxial ZnTe layers on GaAs
Author(s) -
Majumder F. A.,
Kalt H.,
Klingshirn C.,
Stanzl H.,
Gebhardt W.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880116
Subject(s) - luminescence , lasing threshold , exciton , materials science , epitaxy , excitation , cathodoluminescence , optoelectronics , substrate (aquarium) , diffusion , plasma , photoluminescence , molecular physics , atomic physics , condensed matter physics , chemistry , nanotechnology , physics , wavelength , oceanography , layer (electronics) , quantum mechanics , geology , thermodynamics
Abstract By means of ps‐time resolved luminescence measurements the carrier dynamics in ZnTe/GaAs epitaxial layers of different thicknesses are investigated. A linear decay process corresponding to exciton recombination at low and a quadratic process corresponding to the recombination in an electron–hole plasma (EHP) at high excitation, respectively, are observed. The decay processes are dominated by the carrier diffusion into the substrate. The lifetime, binding energy, and temperature of the plasma are extracted from the time‐resolved luminescence spectra. The carrier density found from the luminescence fit is used to describe the band‐gap renormalization effect in ZnTe/GaAs epilayers at high excitation. Laser emission from all samples is observed at low and even up to room temperatures.