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Transient response of a short‐cavity semiconductor laser
Author(s) -
Pompe G.,
Rappen T.,
Wehner M.,
Knop F.,
Wegener M.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221880114
Subject(s) - lasing threshold , laser linewidth , laser , transient (computer programming) , resonator , materials science , semiconductor laser theory , semiconductor , stimulated emission , optics , optical cavity , transient response , spontaneous emission , optoelectronics , excited state , atomic physics , physics , electrical engineering , computer science , engineering , operating system
The transient response of short‐cavity semiconductor lasers excited by 250 fs optical pulses is investigated. The emission is time‐ and spectrally‐resolved by an up‐conversion technique. The experimental evidence is compared with simulations employing a simple resonator model, which allow for a comparison of the energetic position, width, and intensity of the laser emission as a function of time. The time scale of the lasing process is governed by heating due to stimulated emission. Caused by the changing carrier distribution functions, inducing changes of the refractive index, the resonance frequency of the cavity experiences a rapid red shift in time, which cannot be followed adiabatically by stimulated emission. This transient mismatch qualitatively explains the observed temporal evolution of the linewidth.