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Hot Electron High‐Frequency Mobility in Wide‐ and Narrow‐Gap Semiconductors
Author(s) -
Weng X. M.,
Lei X. L.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870242
Subject(s) - semiconductor , boltzmann equation , electric field , condensed matter physics , band gap , electron , electron mobility , physics , distribution function , optoelectronics , quantum mechanics
Hot electron High‐frequency mobility in wide‐ and narrow‐gap semiconductors under the influence of a small ac electric field superimposed on a dc bias electric field using the balance equation theory recently developed for an arbitrary energy band is investigated. In the wide‐gap semiconductor SiC the frequency dependent mobility predicted by the balance equation approach is not in quantitative agreement with a previous calculation based on the Boltzmann equation with a displaced Maxwellian distribution function. In narrow‐gap semiconductors it is found that nonparabolicity strongly affects the frequency dependence of the hot‐electron small signal mobility, such that the curves of the real and imaginary parts of the ac frequency in a strongly nonparabolic system (InAs) appear completely different from those in a weakly or moderately nonparabolic system (GaAs).