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Optimization of Ohmic Contacts to ZnSe by Parabolic Grading of ZnSe 1− x Te x Composition
Author(s) -
Yang G. L.,
Luo H.,
Lewandowski L.,
Furdyna J. K.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870223
Subject(s) - ohmic contact , grading (engineering) , valence band , materials science , valence (chemistry) , condensed matter physics , chemistry , optoelectronics , physics , band gap , nanotechnology , civil engineering , layer (electronics) , engineering , organic chemistry
A new type of grading, namely, parabolic grading, for the purpose of improving ohmic contacts to p‐type ZnSe is presented. The valence band profiles as well as the critical grading length for a 1 kT barrier are calculated for a parabolically graded Zn(Se, Te) structure. Comparison of our results with those of linearly graded structures shows the clear advantage of parabolic grading.