Premium
Review of Compensation Centres in ZnSe:N
Author(s) -
Prior K. A.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870216
Subject(s) - dopant , vacancy defect , compensation (psychology) , materials science , crystallographic defect , nitrogen , selenium , optoelectronics , engineering physics , crystallography , chemistry , metallurgy , doping , physics , psychology , organic chemistry , psychoanalysis
Over the past few years nitrogen has been found to be by far the best dopant to use in the production of p‐type ZnSe, although it can be highly compensated. This review presents evidence for compensation within ZnSe:N due to the presence of selenium vacancy and dopant–vacancy clusters, followed by a comparison of the models which attempt to calculate the degree of compensation and then discuss evidence for the generation and motion of point defects within ZnSe:N at room temperature.