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Deep Etched ZnSe‐Based Nanostructures for Future Optoelectronic Applications
Author(s) -
Bacher G.,
Illing M.,
Forchel A.,
Hommel D.,
Jobst B.,
Landwehr G.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870215
Subject(s) - materials science , photoluminescence , dry etching , optoelectronics , nanostructure , heterojunction , laser , etching (microfabrication) , wavelength , lithography , electron beam lithography , reactive ion etching , optics , nanotechnology , resist , layer (electronics) , physics
By electron beam lithography and a subsequent wet/dry etch process, optically active nanostructures are developed based on ZnSe with lateral extensions down to 35 nm. Dry etching using Ar + ions is found to generate very smooth etch surfaces, while the photoluminescence efficiency of narrow wires is much higher in wet chemically etched structures. As a first application of deep etched nanostructures, index coupled distributed feedback laser structures of second order are realized with periods down to 185 nm on the base of (Cd, Zn)Se/ZnSe/(Mg, Zn) (Se, S) vertical waveguide heterostructures. A clear correlation between the resonator period and the emission wavelength is observed, indicating a high coupling coefficient of the structures. For optical pumping using a pulsed N 2 ‐laser, the laser threshold at room temperature is about 100 kW/cm 2 .