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Study of ZnSe‐Based Layer Structures for Blue‐Green Laser Diodes
Author(s) -
Pessa M.,
Rakennus K.,
Uusimaa P.,
Savolainen P.,
Salokatve A.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870211
Subject(s) - materials science , diode , optoelectronics , cladding (metalworking) , laser , layer (electronics) , molecular beam epitaxy , substrate (aquarium) , semiconductor , green laser , semiconductor laser theory , epitaxy , compound semiconductor , optics , nanotechnology , composite material , oceanography , physics , geology
The possibilities of developing ZnSe blue‐green lasers with new materials and layer structures are studied. In particular, it is considered: (i) the use of an „inverted” laser structure, n‐on‐p configuration, having p‐type barrier reduction layers of III–V compound semiconductors which are sandwiched between the substrate and the device and (ii) the use of ZnMnSSe as a cladding layer. Electronic band structures, current–voltage curves, and light–current curves are calculated for the lasers with inverted layer structures. Preliminary results of a study of ZnMnSSe layers grown by the molecular beam epitaxy method are also presented.