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In‐Situ Characterization of II‐VI Molecular Beam Epitaxy
Author(s) -
Gaines J. M.,
Ponzoni C. A.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870208
Subject(s) - cathodoluminescence , molecular beam epitaxy , reflection high energy electron diffraction , in situ , electron diffraction , characterization (materials science) , materials science , crystal growth , epitaxy , reflection (computer programming) , crystal (programming language) , semiconductor , optoelectronics , crystallography , diffraction , optics , chemistry , nanotechnology , physics , luminescence , organic chemistry , programming language , layer (electronics) , computer science
In‐situ monitoring of crystal growth can provide valuable information on growth processes and feedback to control growth. The use of reflection high‐energy electron diffraction (RHEED) and cathodoluminescence (CL) to examine molecular beam epitaxy (MBE) of II/VI wide‐band‐gap semiconductors is described.