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ZnSe‐Based MOVPE and MBE Grown LEDs
Author(s) -
Stanzl H.,
Reisinger T.,
Wolf K.,
Kastner M.,
Hahn B.,
Gebhardt W.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870207
Subject(s) - metalorganic vapour phase epitaxy , materials science , optoelectronics , electroluminescence , molecular beam epitaxy , light emitting diode , heterojunction , photoluminescence , epitaxy , diffraction , diode , optics , nanotechnology , physics , layer (electronics)
The properties of ZnSe‐based heterostructures on (001) GaAs substrates grown by metalorganic vapor phase epitaxy (MOVPE) are compared with those grown by molecular beam epitaxy (MBE). The structural and optical properties are examined with high‐resolution X‐ray diffraction (HRXRD) and photoluminescence (PL). Furthermore the results of C – V measurements of p‐ZnSe layers doped with nitrogen are discussed and I – V characteristics and electroluminescence (EL) spectra of LEDs grown with both techniques are presented. ZnSe/Zn(SSe) MQWs are prepared with MOVPE and (ZnCd)Se/ZnSe MQWs with MBE to improve the optical efficiency of the diodes.