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Compound‐Source MBE for ZnSe‐Based Lasers
Author(s) -
Ohkawa K.,
Takeishi H.,
Hayashi S.,
Yoshii S.,
Tsujimura A.,
Karasawa T.,
Mitsuyu T.
Publication year - 1995
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.2221870205
Subject(s) - molecular beam epitaxy , heterojunction , optoelectronics , laser , materials science , continuous wave , laser beams , epitaxy , optics , nanotechnology , physics , layer (electronics)
Compound‐source molecular beam epitaxy (CSMBE) for ZnSe‐based lasers is developed. This method employs compound sources instead of elemental sources. The ZnCdSe/ZnSSe/ZnMgSSe separate confinement heterostructure is grown by this method. Continuous‐wave operation of the device by CSMBE at room temperature is demonstrated.